Light emitting device

ABSTRACT

Light-emitting elements have a problem that their light-extraction efficiency is low due to scattered light or reflected light inside the light-emitting elements. The light-extraction efficiency of the light-emitting elements needs to be enhanced by a new method. According to the present invention, a light-emitting element includes a first layer generating holes, a second layer including a light-emitting layer for each emission color and a third layer generating electrons between an anode and a cathode, and the thickness of the first layer is different depending on each layer including the light-emitting layer for each emission color. A layer in which an organic compound and a metal oxide are mixed is used as the first layer, and thus, the driving voltage is not increased even when the thickness is increased, which is preferable.

TECHNICAL FIELD

The present invention relates to a light-emitting element having alight-emitting layer, a light-emitting device having the light-emittingelement, and a manufacturing method thereof

BACKGROUND ART

A light-emitting element having a light-emitting layer has been used fora display recently. Such a display using a light-emitting element hasadvantageous effects such as a wide viewing angle, a high-response speedand low power consumption, as compared with a display having aliquid-crystal layer, and thus, has been developed actively.

Light-emitting elements have a problem that their light-extractionefficiency is low due to scattered light or reflected light inside thelight-emitting elements. The light-extraction efficiency needs to beenhanced.

In order to enhance the light-extraction efficiency, there is proposed astructure in which a transparent electrode used for an electrode of alight-emitting element has a different thickness according to emissioncolors (Reference 1: Japanese Patent Laid-Open No. 2003-142277).

DISCLOSURE OF INVENTION

It is an object of the present invention to enhance the light-extractionefficiency of a light-emitting element by a method different from thatof Reference 1.

In order to achieve the object, a thickness of a layer constituting apart of a light-emitting element is made different depending on eachemission color, which is one feature of the present invention.

One mode of the present invention is a light-emitting device comprisinga plurality of light-emitting elements. The plurality of light-emittingelements each include a first electrode and a second electrode; and afirst layer, a second layer and a third layer which are sequentiallyformed between the first electrode and the second electrode, wherein thefirst layer serves as a layer generating holes, the second layer servesas a layer including a light-emitting layer for each emission color, andthe third layer serves as a layer generating electrons, and thethickness of the first layer is different depending on each layerincluding a light-emitting layer.

Another mode of the present invention is a light-emitting devicecomprising a plurality of light-emitting elements. The plurality oflight-emitting elements each include a first electrode that has anon-light-transmitting property and a second electrode that has alight-transmitting property; a first layer, a second layer and a thirdlayer which are sequentially formed between the first electrode and thesecond electrode, wherein the first layer serves as a layer generatingholes, the second layer serves as a layer including a light-emittinglayer for emission colors, and the third layer serves as a layergenerating electrons, and the thickness of the first layer is differentdepending on each of the emission colors so that light emitted from thelight-emitting layer and reflected light, which has been emitted fromthe light-emitting layer and is reflected on the first electrode, canenhance each other.

One feature of the present invention is that the first layer is a layerin which an organic compound and a metal oxide that is an inorganiccompound are mixed.

According to the present invention, a light-emitting device having thelight-emitting element and a transistor for controlling current suppliedto the light-emitting element can be provided.

One feature of the present invention is that the thickness of a layerconstituting a part of a light-emitting element is made differentaccording to each color of color filters and the like. The case of usinga color filter overlapped with a color conversion layer is also includedin the color filter and the like described above.

A specific mode of the present invention is a light-emitting devicecomprising: a plurality of types of color filters having differentoptical characteristics; a first electrode and a second electrode; and afirst layer, a second layer and a third layer sequentially formedbetween the first electrode and the second electrode, wherein any of thefirst to third layers has an organic material and a metal oxide, and thethickness of the layer having the organic material and the metal oxideis different depending on each of the optical characteristics.

Another mode of the present invention is a light-emitting devicecomprising: a semiconductor film; a first electrode and a secondelectrode formed over the semiconductor film; a first layer, a secondlayer and a third layer sequentially formed between the first electrodeand the second electrode, a plurality of types of color filters havingdifferent optical characteristics, which are formed on the firstelectrode side (on the emission side), wherein the first electrode has alight-transmitting property; the first layer serves as a layergenerating holes, the second layer serves as a layer including alight-emitting layer, and the third layer serves as a layer generatingelectrons; the first layer has an organic material and a metal oxide;and the thickness of the first layer is different depending on each ofthe optical characteristics.

The plurality of types of color filters having different opticalcharacteristics mean, for example, color filters having opticalcharacteristics of red (R), green (G) and blue (B). Such opticalcharacteristics of red (R), green (G) and blue (B) can be obtained alsoin the case of using color filters overlapped with color conversionlayers. A function of color filters and the like provided in a displaydevice can be obtained by using the plurality of types of color filters.Thus, making thicknesses of light-emitting elements different dependingon optical characteristics means making thicknesses of light-emittingelements different in regions corresponding to each color filter and thelike. Hereinafter, it is referred to as making thicknesses oflight-emitting elements different depending on each color filter.

According to the present invention, the metal oxide is molybdenum oxide,vanadium oxide or rhenium oxide. A nitride or an oxynitride of the metaldescribed above may be used instead of the metal oxide.

As described above, the thickness of at least one of the first to thirdlayers is made different depending on each emission color, therebypreventing the light-extraction efficiency from decreasing.Consequently, the maximum light-extraction efficiency can be obtained.At this time, the thickness of a layer between a reflective electrodeand a layer in which electrons and holes are recombined (i.e., alight-emitting layer) may be made different depending on each emissioncolor.

Further, it is preferable that a layer in which an organic compound anda metal oxide that is an inorganic compound are mixed is used as a layerto be made thicker, since a voltage to be applied so as to obtain apredetermined current (also referred to as a driving voltage) does notbecome high. Consequently, lower power consumption of a light-emittingdevice can be achieved.

One feature of the present invention is that the thickness of at leastone of the first to third layers is made different depending on eachcolor filter and the like. At this time, the thickness of a layerbetween a reflective electrode and a layer in which electrons and holesare recombined (i.e., a light-emitting layer) may be made differentdepending on each color filter. As a result, it is possible to preventthe light-extraction efficiency from decreasing.

Further, it is preferable that a layer in which an organic compound anda metal oxide that is an inorganic compound are mixed is used as a layerto be made thicker, since a driving voltage does not become high.Consequently, lower power consumption can be achieved.

BRIEF DESCRIPTION OF DRAWINGS

In the accompanying drawings:

FIG. 1 shows a light-emitting element according an aspect of the presentinvention;

FIG. 2 shows a light-emitting element according an aspect of the presentinvention;

FIG. 3 shows a cross section of a pixel having a light-emitting elementaccording an aspect of the present invention;

FIG. 4 shows a cross section of a pixel having a light-emitting elementaccording an aspect of the present invention;

FIG. 5 shows a cross section of a pixel having a light-emitting elementaccording an aspect of the present invention;

FIG. 6 shows a cross section of a pixel having a light-emitting elementaccording an aspect of the present invention;

FIGS. 7A to 7C are each an equivalent circuit of a pixel having alight-emitting element according an aspect of the present invention;

FIGS. 8A to 8F each show an electronic device having a light-emittingelement according an aspect of the present invention;

FIG. 9 is a graph of voltage with respect to current density of alight-emitting element;

FIG. 10 is a graph of voltage with respect to current density of alight-emitting element;

FIG. 11 is a graph of voltage with respect to current density of alight-emitting element according to one aspect of the present invention;

FIG. 12 is a graph showing absorption spectrum of a light-emittingelement;

FIG. 13 is a graph showing emission intensity with respect to wavelengthof a light-emitting element according to one aspect of the presentinvention;

FIG. 14 is a graph showing emission intensity with respect to currentdensity of a light-emitting element;

FIG. 15 shows a light-emitting element according to an aspect of thepresent invention;

FIG. 16 shows a light-emitting element according to an aspect of thepresent invention;

FIG. 17 shows a light-emitting element according to an aspect of thepresent invention;

FIG. 18 is a cross-sectional view showing a light-emitting elementaccording to an aspect of the present invention;

FIG. 19 is a cross-sectional view showing a light-emitting elementaccording to an aspect of the present invention;

FIG. 20 is a cross-sectional view showing a light-emitting elementaccording to an aspect of the present invention; and

FIG. 21 is a cross-sectional view showing a light-emitting elementaccording to an aspect of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment Modes according to the present invention will hereinafter bedescribed with reference to the accompanying drawings. The presentinvention can be carried out in many different modes, and it is easilyunderstood by those skilled in the art that modes and details hereindisclosed can be modified in various ways without departing from thespirit and the scope of the present invention. It should be noted thatthe present invention should not be interpreted as being limited to thedescription of the embodiment modes to be given below. The samereference numerals are used for the same portions and the portions withsimilar functions in all drawings, and the description thereof is notrepeated.

Embodiment Mode 1

Embodiment Mode 1 describes a structure of a light-emitting element.

As shown in FIG. 1, a light-emitting element of the present inventionincludes a first electrode 101 and a second electrode 102 that areopposed to each other, and a first layer 111, a second layer 112 and athird layer 113 are stacked in this order over the first electrode 101.In such a light-emitting element, holes are injected into the secondlayer 112 from the first layer 111 and electrons are injected into thesecond layer 112 from the third layer 113, when a voltage is applied tothe light-emitting element such that a potential of the first electrode101 are higher than that of the second electrode 102. The holes andelectrons are recombined in the second layer 112 to excite alight-emitting substance. The excited light-emitting substance emitslight when returning to the ground state.

It is one feature of such light-emitting elements that the thickness ofat least one of the layers except the first electrode and the secondelectrode is made different in each of light-emitting elementsexhibiting emission colors. Therefore, the light-extraction efficiencycan be increased.

For example, as shown in FIG. 2, light-emitting elements that emit lightof red (R), green (G) and blue (B) share the first electrode 101 thathas a non-light-transmitting property and the second electrode 102 thathas a light-transmitting property, and further have first layers H1R,IHG and IHB, second layers 112R, 112G and 112B, and third layers 113R,113G and 113B. The thicknesses of the first layers H1R, H1G and H1B aremade different depending on each emission color.

Consequently, it is possible to prevent decrease of the light-extractionefficiency due to the differences in light paths when light isrecognized directly through the second electrode and when light isrecognized after it is reflected on the first electrode and passesthrough the second electrode.

Specifically, when light enters the first electrode, phase reversal isgenerated in the reflected light, thereby generating the effect ofinterference of light for reflected light and direct light. At thistime, in the case where an optical distance between the light-emittinglayer and the reflective electrode (i.e., refractive index×distance) is(2m−1)/4-fold (m is a given positive integer) of the emissionwavelength, or, in the case where the optical distance is ¼, ¾, 5/4, . .. -fold of the emission wavelength, the light extraction efficiency isincreased. In the meanwhile, in the case where the optical distance ism/2 times (m is a given positive integer), or, ½, 1, 3/2 . . . -fold ofthe emission wavelength, the light-extraction efficiency is reduced.

Therefore, in the light-emitting element of the present invention, thethickness of at least one of the first to third layers is made differentin each light-emitting element so that the optical distance between thelight-emitting region and the reflective electrode, in other words,refractive index×distance, is (2m−1)/4 fold (m is a given positiveinteger) of the emission wavelength.

Specifically, in the first to third layers, although the thickness of alayer between the layer in which electrons and holes are recombined(i.e., light-emitting layer) and the reflective electrode may be madedifferent, the thickness of the layer between the layer in whichelectrons and holes are recombined and a light-transmitting electrodemay be made different. Alternatively, the thicknesses of the both layersmay be made different. Consequently, light can be extracted outsideefficiently.

Specifically, when the first to third layers are formed by anevaporation method using an evaporation mask, and the thickness of atleast one of the layers is made different, the same evaporation mask canbe used. On the other hand, as described in Reference 1, aphotolithography process and an etching process are needed so as to makethe thickness of an electrode different, and thus the number ofprocesses is increased.

In this manner, according to the present invention, the decrease of thelight-extraction efficiency can be prevented without increasing thenumber of processes.

In addition, according to the present invention typified by FIG. 2, thethickness of the light-emitting element that generates blue light is thethickest. This is because m is 2 in the light-emitting element for bluelight and m is 1 in the light-emitting elements for red and green light.In the light-emitting element for blue light, in the case of m=1, thethickness becomes extremely small. However, in the case of m=2, thethickness becomes large and thus, the productivity can be enhanced. Asjust described, according to the present invention, the values of m arenot necessarily equal in each color, and the design margin of thethickness of the light-emitting elements can be widened by selecting thevalues of m.

Because the thickness of any of the first to third layers is madedifferent, a layer is needed to be thicker. Thus, one feature of thepresent invention is that a layer in which an organic compound and ametal oxide that is an inorganic compound are mixed is used as the layerto be made thicker.

Commonly, when the thickness of a layer in the light-emitting elementbecomes large, the driving voltage also increases, which is notpreferable. However, as described in Embodiments below, the presentinventors have found that the driving voltage itself can be lowered byusing a layer in which an organic compound and a metal oxide that is aninorganic compound are mixed as the layer to be made thicker, withoutincreasing the driving voltage.

By making at least one of the first to third layers thicker, a shortcircuit between the first and second electrodes can be prevented, andproductivity can be enhanced, which is preferable.

As described above, one feature of the present invention is that thethickness of at least one of the first to third layers is made differentdepending on each emission color. At this time, the thickness of a layerbetween a reflective electrode and a layer in which electrons and holesare recombined (Le., light-emitting layer) may be made differentdepending on each emission color. Further, it is preferable that a layerin which an organic compound and a metal oxide that is an inorganiccompound are mixed is used as the layer to be made thicker, since adriving voltage does not become high.

Embodiment Mode 2

Embodiment Mode 2 describes a structure of a light-emitting elementwhich is different from that of Embodiment Mode 1.

As shown in FIG. 15, a light-emitting element shown in this embodimentmode includes the first electrode 101 and the second electrode 102 thatare opposed to each other, and the first layer 111, the second layer112, the third layer 113 and a fourth layer 128 that are sequentiallystacked over the first electrode 101. One feature of the light-emittingelement is to have the fourth layer 128. The fourth layer 128 can beformed with the same material as that of the first layer 111. Otherstructures are the same as those of Embodiment Mode 1 and thus, thedescription thereof is omitted.

When the fourth layer 128 is provided, damages to underlayers in formingthe second electrode 102 can be reduced.

The thickness of the fourth layer 128 is made different depending oneach light-emitting element emitting each emission color. Consequently,the decrease of the light-extraction efficiency can be prevented. Inaddition, when the thickness is made different, a metal oxide such asmolybdenum oxide, vanadium oxide or rhenium oxide may be used as thefourth layer 128. Also, a nitride or an oxynitride of these metals maybe employed. This is because the driving voltage is not needed to beincreased, even when the thickness is made larger using such metaloxides.

Damages to underlayers in forming the second electrode 102 can beexpected to be more reduced by making the fourth layer 128 thicker.

The thickness of the first layer 111 can be made different depending oneach light-emitting element emitting each emission color, as well as thefourth layer 128. Consequently, the thickness of the light-emittingelement can be made more increased and defects in manufacturing can bereduced by making thicknesses of plural layers different, in addition toprevention of decrease in the light-extraction efficiency. The metaloxide described above, such as molybdenum oxide, vanadium oxide orrhenium oxide, is used for the first layer 111, which does not increasethe driving voltage.

The present invention in which the thickness of a layer is madedifferent depending on each light-emitting element emitting eachemission color can be applied without limitations on a structure of alight-emitting element. As a result, decrease in the light-extractionefficiency can be prevented and the thickness of a light-emittingelement can be increased. Further, the driving voltage is not madehigher as the result of using a metal oxide or the like for the layer tobe made thicker, which is preferable.

Embodiment Mode 3

Embodiment Mode 3 describes a structure in which the thickness of any oflayers is made different in a light-emitting device including a colorfilter.

As shown in FIG. 16, color filters 115R, 115G and 115B are provided inregions that are to exhibit red (R), green (G) and blue (B) that aredifferent in optical characteristics, respectively. The color filterscan be formed using a known material by a screen printing method, adroplet discharging method or the like. FIG. 16 shows the case where thecolor filters 105R, 105G and 105B are provided on the second electrodeside 102 (on the emission side), and in this case, the second electrode102 needs to be light-transmitting.

The structure of the light-emitting element is as follows: the firstlayers H1R, H1G and H1B, the second layers 112R, 112G, and 112B, thethird layers 113R, 113G and 113B, and the second electrode 102 areformed sequentially over the first electrode 101. Since each color isgenerated by the color filters, the first to third layers are formedusing the same material. However, in FIG. 16, the first to third layersare denoted by the first layers H1R, H1G and H1B, the second layers112R, 112G, and 112B, the third layers 113R, 113G and 113B in order tocorrespond to each color filter.

The thickness of any of the first to third layers is made differentdepending on each color filter. In FIG. 16, the thickness of the secondlayers 112R, 112G and 112B is different depending on each color filter.

According to this structure, it is possible to prevent decrease of thelight-extraction efficiency due to the differences in light paths whenlight is recognized directly through the second electrode 102 and whenlight is recognized by passing through the second electrode 102 after itis reflected on the first electrode 101.

Specifically, when light enters the first electrode 101, phase reversalis generated in the reflected light, thereby generating the effect ofinterference of light for reflected light and direct light. At thistime, in the case where an optical distance between the light-emittinglayer and the reflective electrode (i.e., refractive index×distance) is(2m−1)/4-fold (m is a given positive integer) of the emissionwavelength, or, in the case where the optical distance is ¼, ¾, 5/4 . .. fold of the emission wavelength, the light extraction efficiency isincreased. In the meanwhile, in the case where the optical distance ism/2 times (m is a given positive integer), or, ½, 1, 3/2 . . . -fold ofthe emission wavelength, the light-extraction efficiency is reduced.

Therefore, in the light-emitting element of the present invention, thethickness of any of the first to third layers is made differentdepending on each color filter so that the optical distance between thelayer in which electrons and holes are recombined (i.e., light-emittinglayer) and the reflective electrode, in other words, refractiveindex×distance, is (2m−1)/4-fold (m is a given positive integer) of theemission wavelength.

Specifically, in the first to third layers, the thickness of a layerbetween the layer in which electrons and holes are recombined and thefirst electrode 101 serving as the reflective electrode may be madedifferent. However, without being limited to this structure, thethickness of a layer between the layer in which electrons and holes arerecombined and the second electrode 102 serving as thelight-transmitting electrode may be made different. Alternatively, thethicknesses of the both layers may be made different. Consequently,light can be extracted outside efficiently.

Specifically, when the first to third layers are formed by anevaporation method using an evaporation mask, and the thickness of atleast one of the layers is made different, the same evaporation mask canbe used, which is preferable. On the other hand, as described inReference 1, a photolithography process and an etching process areneeded to make the thickness of an electrode different, and thus thenumber of processes is increased.

In this manner, according to the present invention, the decrease of thelight-extraction efficiency can be prevented without increasing thenumber of processes.

A layer is needed to be thicker because any of the first to third layersis made different. Thus, one feature of the present invention is that alayer in which an organic compound and a metal oxide that is aninorganic compound are mixed is used as the layer to be made thicker.

Commonly, when the thickness of a layer in the light-emitting elementbecomes large, the driving voltage also increases, which is notpreferable. However, as described in Embodiments below, the presentinventors have found that the driving voltage itself can be lowered byusing a layer in which an organic compound and a metal oxide that is aninorganic compound are mixed is used as a layer to be made thicker,without increasing the driving voltage, even when the layer is madethicker.

By making any of the first to third layers thicker, a short circuitbetween the first electrode 101 and second electrode 102 can beprevented, and productivity can be enhanced, which is preferable.

FIG. 17 shows a case where color filters are provided on the firstelectrode side (on the emission side), which is different from that inFIG. 16. Other structures are similar to those in FIG. 16, and thus, thedescription thereof is omitted. In the case where the color filters areprovided on the first electrode side as shown in FIG. 17, a plurality ofinsulating films and the like constituting a part of a thin filmtransistor are stacked below the first electrode. Thus, it is preferablethat the thickness of each layer is made different in consideration oflight reflected by such insulating films and the like. Further, theinsulating films and the like may be removed in a region through whichlight passes.

The present invention as shown in FIG. 16 or 17 has one feature that thethickness of at least one of the first to third layers is made differentdepending on each color filter. At this time, the thickness of a layerbetween the layer in which electrons and holes are recombined (i.e.,light-emitting layer) and the reflective electrode is preferably madedifferent depending on each color filter. Further, it is preferable thata layer in which an organic compound and a metal oxide that is aninorganic compound are mixed is used as the layer to be made thicker,since a driving voltage does not become high.

Embodiment Mode 4

Embodiment Mode 4 specifically describes a cross-sectional structure ofa pixel including a color filter and a light-emitting element. Across-sectional structure of a pixel in the case where a transistor forcontrolling current supplied to a light-emitting element (drivingtransistor) is a p-channel thin film transistor (TFT) is described withreference to FIG. 18. This embodiment mode describes the case where thelight-emitting element has two electrodes, namely, the first electrode101 and the second electrode 102, and one of the first electrode 101 andthe second electrode 102 whose potential can be controlled by atransistor is an anode and the other is a cathode.

FIG. 18 is a cross-sectional view of a pixel including color filters105R, 105G and 105B, in the case of a top emission type in which TFTs601R, 601G and 601B are each p-channel type and light generated in alight-emitting element 603 is extracted through the second electrode102. In FIG. 18, the first electrode 101 of the light-emitting element603 is electrically connected to the TFTs 601R, 601G and 601B.

The TFTs 601R, 601G and 601B are 10 to 200 nm thick, and their channelforming regions are formed with island-like semiconductor films. Any ofan amorphous semiconductor film, a crystalline semiconductor film, and amacrocrystalline semiconductor film may be used as the semiconductorfilm. For example, in the case of forming an amorphous semiconductorfilm, the amorphous semiconductor film is formed first and is heated tobe crystallized by a heat treatment to form a crystalline semiconductorfilm. The heat treatment can be conducted using a heating furnace, laserirradiation, light-irradiation from a lamp instead of laser light(hereinafter, lamp annealing), or a combination thereof.

In the case of laser irradiation, a continuous wave (CW) laser or apulsed laser may be used.

The laser irradiation may be conducted so that the incident angle θ oflaser light with respect to a semiconductor film is 0°<θ<90°.Consequently, an interference of laser light can be prevented.

The semiconductor film may be irradiated with continuous wave laserlight of a fundamental wave and continuous wave laser light of aharmonic, or may be irradiated with continuous wave laser light of afundamental wave and pulsed wave laser light of a harmonic. Energy canbe supplemented by irradiating with plural kinds of laser light.

In the case of the pulsed laser, a pulsed laser may be oscillated withsuch a repetition rate that the laser of the next pulse is emittedbefore solidifying the semiconductor film that has been melted. Thismakes it possible to obtain crystal grains which are sequentially grownin the scanning direction. In other words, it is possible to use apulsed beam with a lower limit of a repetition rate that is set shorterthan the time required for the melted semiconductor film to solidify.The pulsed beam that can be used actually is a repetition rate of 10 MHzor more. This repetition rate is extremely higher than that of thepulsed laser used usually, which is from several tens to several hundredHz, to conduct laser crystallization.

In the case of using a heating furnace for another heat treatment, anamorphous semiconductor film is heated at a temperature of 500 to 550°C. for 2 to 20 hours. At this time, the temperature may be set inmultiple stages in the range of 500 to 550° C. so as to gradually reacha higher temperature. This is because so-called dehydrogenation can beperformed to reduce film roughness during crystallization, sincehydrogen and the like of the amorphous semiconductor film are releasedin the first low temperature heating process. When a metal element forpromoting crystallization, for example, Ni, is further formed over theamorphous semiconductor film, the heat temperature can be lowered, whichis preferable. Even in the case of crystallization using such a metalelement, a heat treatment may be performed at a temperature of 600 to950° C.

However, in the case of forming a metal element, there is a concern thatthe metal element may adversely affect electric characteristics of asemiconductor element. Thus, a gettering process is required to reduceor remove the metal element. For example, a process of gettering themetal element may be performed using the amorphous semiconductor film asa gettering sink.

The TFTs 601R, 601G and 601B, a gate insulating film covering thesemiconductor film, a gate electrode in which a fist conductive film anda second conductive film are stacked, an insulating film over the gateelectrode are provided.

The TFTs 601R, 601G and 601B are each p-channel type, and thesemiconductor film has a single drain structure having only a highconcentration impurity region. Alternatively, the TFTs 601R, 601G and601B may have an LDD (lightly doped drain) structure in which a lowconcentration impurity region and a high concentration impurity regionare provided in the semiconductor film.

The TFTs 601R, 601G and 601B are covered with an interlayer insulatingfilm 607, and a bank 608 having an opening portion is formed over theinterlayer insulating film 607. The first electrode 101 is partiallyexposed in the opening portion of the bank 608, and the first electrode101, electroluminescent layers 605R, 605G and 605B, and the secondelectrode 102 are sequentially stacked in the opening portion. Theelectroluminescent layers can be formed using the same material;however, the electroluminescent layers are denoted by theelectroluminescent layers 605R, 605G and 605B so as to correspond toeach color filter in the drawing.

The electroluminescent layers 605R, 605G and 605B correspond to thefirst to third layers 111, 112 and 113, and the thickness of any of thefirst to third layers is made different depending on each color filter.In this embodiment mode, the relationship between the thicknesses of theelectroluminescent layers becomes 605R<605G<605B. This embodiment modeshows a top emission type, and thus, the thickness of the first layersclosest to the first electrode 101 may be different depending on eachcolor filter. As a result, decrease in the light-extraction efficiencycan be prevented. Preferably, increase in driving voltage due to athicker thickness can be prevented by using a layer in which an organiccompound and a metal oxide are mixed as the first layer.

Since the top emission type is shown in this embodiment mode, the firstelectrode 101 is formed using a non-light-transmitting material, inother words, highly reflective material. The concrete materials thereofare shown in embodiment modes described above.

The second electrode 102 is preferably formed using a light-transmittingmaterial, more preferably, a substance having a high work function. Theconcrete materials thereof are shown in embodiment modes describedabove.

In addition, since the transistor for controlling supply is p-channeltype, a wiring connected to the TFTs 601R, 601G and 601B can be used asthe first electrode 101.

The first electrode 101 or the second electrode 102 can be formed by asputtering method, an evaporation method or the like.

The interlayer insulating film 607 is formed using an organic resinmaterial, an inorganic insulating material, or an insulator includingSi—O—Si bond, which is formed from a siloxane based material. Siloxanebased insulator has a skeleton formed by the bond of silicon (Si) andoxygen (O), in which a compound containing at least hydrogen (such as analkyl group or aromatic hydrocarbon) is included as a substituent.Further, a fluoro group may be used as a substituent. In addition, acompound containing at least hydrogen and a fluoro group may be used asa substituent. Moreover, a material referred to as a low dielectricconstant material (low-k material) may be used for the interlayerinsulating film 607.

The bank 608 can be formed using an organic resin material, an inorganicinsulating material or a siloxane based insulator. For example, acrylic,polyimide, polyamide and the like can be used as the organic resinmaterial, and silicon oxide, silicon nitride oxide and the like can beused as the inorganic insulating material. In particular, aphotosensitive organic resin material is used for the bank 608, anopening portion is formed over the first electrode 101 so that the sideof the opening portion has an inclined plane with a continuouscurvature. As a result, a short circuit between the first electrode 101and the second electrode 102 can be prevented.

In such a pixel, light emitted from the light-emitting element 603 canbe extracted through the second electrode 102 as shown by the outlinearrow.

Next, FIG. 19 is a cross-sectional view of a pixel in the case of abottom emission type in which TFTs 601R, 601G and 601B are eachp-channel type and light generated in a light-emitting element 603 isextracted through the second electrode 102.

In FIG. 19, the first electrode 101 of the light-emitting element 603 iselectrically connected to the TFTs 601R, 601G and 601B. In addition,electroluminescent layers 605R, 605G and 605B, and the second electrode102 are sequentially stacked over the first electrode 101.

The TFTs 601R, 601G and 601B can be formed in the same manner as in FIG.18. In addition, since the bottom emission type is shown in FIG. 19, thefirst electrode 101 has a light-transmitting property and the secondelectrode 102 has a non-light-transmitting property. Materials of theelectrodes can be referred to the description of the first electrode andthe second electrode in FIG. 18. Color filters 105R, 105G and 105B areprovided on the substrate side (on the emission side). For example, thecolor filters 105R, 105G and 105B can be provided for a rear face of thesubstrate (i.e., a surface in which TFTs are not formed).

The electroluminescent layers 605R, 605G and 605B can be formed in thesame manner as the electroluminescent layers shown in FIG. 18, and thethickness of at least one of the first to third layers is differentdepending on each color filter. Since the bottom emission type is shownin FIG. 19, the thickness of the third layer closest to the secondelectrode 102 may be made different depending on each color filter. Inthis embodiment mode, the relationship between the thicknesses of theelectroluminescent layers is 605R<605G<605B. Consequently, decrease inthe light-extraction efficiency can be prevented. Preferably, a layer inwhich an organic compound and a metal oxide are mixed is used as thethird layer, thereby preventing the increase of the driving voltage dueto the thicker thickness.

In the pixel shown in FIG. 19, light emitted from the light-emittingelement 613 can be extracted through the second electrode 102 as shownby the outline arrow, and the color filters 105R, 105G and 105B areprovided on the emission side.

This embodiment mode can be freely combined with the embodiment modesdescribed above.

Embodiment Mode 5

Embodiment Mode 5 specifically describes a cross-sectional structure ofa pixel having a color filter and a light-emitting element, in the casewhere a transistor for controlling current supplied to a light-emittingelement (driving transistor) is an n-channel thin film transistor (TFT).This embodiment mode describes the case where the light-emitting elementhas two electrodes, namely, the first electrode is an anode and thesecond electrode is a cathode.

Next, FIG. 20 is a cross-sectional view of a pixel in the case of a topemission type in which TFTs 611R, 611G and 611B are each n-channel typeand light generated in a light-emitting element 613 is extracted throughthe second electrode 102. In FIG. 20, the first electrode 101 of thelight-emitting element 613 is electrically connected to the TFTs 611R,611G and 611B. In addition, electroluminescent layers 615R, 615G and615B, and the second electrode 102 are sequentially stacked over thefirst electrode 101.

The TFTs 611R, 611G and 611B can be formed in the same manner as TFTs601R, 601G and 601B in the embodiment mode described above.

Since the top emission type is shown in FIG. 20, the first electrode 101is formed using a non-light-transmitting material and the secondelectrode 102 is formed using a light-transmitting material. Thematerials can be referred to the embodiment modes described above. Inaddition, since the transistor for controlling supply is n-channel type,a wiring connected to the TFTs 611R, 611G and 611B can be used as thefirst electrode 101. The color filters 105R, 105G and 105B are providedon the second electrode 102 side. And the second electrode has alight-transmitting property.

The electroluminescent layers 615R, 615G and 615B can be formed in thesame manner as the electroluminescent layers 605R, 605G and 605B in theembodiment mode described above. The hole injecting layer, the holetransporting layer, the light-emitting layer, the electron transportinglayer and the electron injecting layer are stacked in this order on thefirst electrode 101, since the first electrode 101 is an anode, when theelectroluminescent layer 615 has, in addition to the light-emittinglayer, any of the following: the hole injecting layer, the holetransporting layer, the electron transporting layer and the electroninjecting layer.

The electroluminescent layers 615R, 615G and 615B correspond to thefirst to third layers 111, 112 and 113, and the thickness of any of thefirst to third layers is made different depending on each color filter.Since the top emission type is shown in this embodiment mode, thethickness of the first layer closest to the first electrode 101 may bemade different depending on each color filter. In this embodiment mode,the relationship between the thicknesses of the electroluminescentlayers is 615R<615G<615B. Consequently, decrease in the light-extractionefficiency can be prevented. Preferably, a layer in which an organiccompound and a metal oxide are mixed is used as the first layer, therebypreventing the increase of the driving voltage due to the thickerthickness.

In the pixel shown in FIG. 20, light emitted from the light-emittingelement 613 can be extracted through the second electrode 102 as shownby the outline arrow, and the color filters 105R, 105G and 105B areprovided on the emission side.

Next, FIG. 21 is a cross-sectional view of a pixel having each emissioncolor (RGB), in the case of a bottom emission type in which TFTs 611R,611G and 611B are each n-channel type and light generated in alight-emitting element 613 is extracted through the first electrode 101.

In FIG. 21, the first electrode 101 of the light-emitting element 613 iselectrically connected to the TFTs 611R, 611G and 611B. In addition,electroluminescent layers 615R, 615G and 615B, and the second electrode102 are sequentially stacked over the first electrode 101.

The TFTs 611R, 611G and 611B can be formed in the same manner as in theembodiment mode described above. In addition, since the bottom emissiontype is shown in FIG. 21, the first electrode 101 has alight-transmitting property and the second electrode 102 has anon-light-transmitting property. The materials thereof can be referredto the embodiment modes described above. Further, the color filters105R, 105G and 105B are provided on the first electrode 101 side. Andthe first electrode 101 has a light-transmitting property.

The electroluminescent layers 615R, 615G and 615B can also be formed inthe same manner as in the embodiment modes described above and thethickness of any of the first to third layers is made differentdepending on each color filter. Note that the hole injecting layer, thehole transporting layer, the light-emitting layer, the electrontransporting layer and the electron injecting layer are stacked in thisorder on the first electrode 101, since the first electrode 101 is ananode, when the electroluminescent layer 615 has, in addition to thelight-emitting layer, any of the following: the hole injecting layer,the hole transporting layer, the electron transporting layer and theelectron injecting layer.

Since the bottom emission type is shown in FIG. 21, the thickness of thethird layer closest to the second electrode 102 is made differentdepending on each color filter. In this embodiment mode, therelationship between the thicknesses of the electroluminescent layers is615R<615G<615B. Consequently, decrease in the light-extractionefficiency can be prevented. Preferably, a layer in which an organiccompound and a metal oxide are mixed is used as the third layer, therebypreventing the increase of the driving voltage due to the thickerthickness.

In the pixel shown in FIG. 21, light emitted from the light-emittingelement 613 can be extracted through the first electrode 101 as shown bythe outline arrow, and the color filters 105R, 105G and 105B areprovided on the emission side.

This embodiment mode can be freely combined with the embodiment modesdescribed above.

Embodiment Mode 6

Embodiment Mode 6 describes materials of the first to third layers andthe electrodes.

The first layer 111 is a layer generating holes. As the first layer 111,for example, a layer containing a substance having hole transportingproperty and a substance having electron accepting property with respectto the substance having hole transporting property (in other words, thesubstance serving as an acceptor for the substance having holetransporting property) can be given. The substance having electronaccepting property with respect to the substance having holetransporting property is preferably included so as to satisfy a molarratio (i.e., the substance having electron accepting property withrespect to the substance having hole transporting property/the substancehaving hole transporting property) of 0.5 to 2.

The substance having hole transporting property indicates a substancehaving a strong property of transporting holes rather than electrons. Anorganic compound, for example, an aromatic amine compound such as4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (α-NPD),4,4′-bis[N-(3-methylphenyl)-N-phenylamino]biphenyl (TPD),4,4′,4″-tris(N,N-diphenylamino)triphenylamine (TDATA),4,4′,4″-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (MTDATA),and 4,4′-bis {N-[4-(N,N-di-m-tolylamino)phenyl]-N-phenylamino}biphenyl(DNTPD); a phthalocyanine compound such as phthalocyanine (H₂Pc), copperphthalocyanine (CuPc) and vanadyl phthalocyanine (VOPc) can be used.Also, as the substance having hole transporting property, for example, acarbazole derivative such as 4,4′-di(N-carbazolyl)biphenyl (CBP) or anaromatic hydrocarbon compound such as9,10-di(2-naphthyl)-2-tert-butylanthracene (t-BuDNA) can be applied.Note that the substance having bole transporting property is not limitedto these materials.

As the substance having electron accepting property with respect to thesubstance having hole transporting property, for example, a metal oxidesuch as molybdenum oxide, vanadium oxide, or ruthenium oxide can beused. Further, a nitride or an oxynitride of the metals may be employed.The substance having electron accepting property with respect to thesubstance having hole transporting property is not limited thereto.

The first layer 111 in which the substance having hole transportingproperty and the substance having electron accepting property withrespect to the substance having hole transporting property are mixed canbe formed by a co-evaporation method. Specifically, the first layer 111can be formed by combining the same methods or different methods, forexample, a co-evaporation method using resistance heating evaporation, aco-evaporation method using electron beam evaporation, a co-evaporationmethod using resistance heating evaporation and electron beamevaporation, a formation method using resistance heating evaporation andsputtering, a formation method using electron beam evaporation andsputtering, and the like. In addition, the above described examples aregiven in consideration of forming a layer including two types ofmaterials; however, a layer including three or more types of materialscan also be formed by combining the same methods or different methods aswell.

The first layer 111 may include another organic compound, for example,rubrene. Reliability can be enhanced by adding rubrene.

In addition, the first layer 111 may be a layer including a metal oxidesuch as molybdenum oxide, vanadium oxide, ruthenium oxide, cobalt oxideor copper oxide. In addition, a nitride or an oxynitride of the metalsmay be employed.

However, it is preferable that the first layer 111 is formed with thelayer containing an organic compound and a metal oxide as describedabove, since the conductivity can be enhanced at this time. When theconductivity is high, the first layer 111 can be made thicker.

The second layer 112 is a layer including a light-emitting layer. Thesecond layer 112 may have a single layer structure or a multilayerstructure. For example, as shown in FIG. 1, the second layer 112 mayhave a multilayer structure including a hole transporting layer 121, anelectron transporting layer 123, and an electron injecting layer 124, inaddition to the light-emitting layer 122, or a single layer of thelight-emitting layer 122. Note that the light-emitting substance is asubstance that has a favorable light-emitting efficiency and can emitlight of a desired emission wavelength.

The second layer 112 is preferably formed using a layer in which alight-emitting substance is dispersed in a layer of a substance having alarger energy gap than that of the light-emitting substance. However,the second layer is not limited thereto. Further, the energy gapindicates an energy gap between the LUMO level and the HOMO level. Notethat the light-emitting substance may be a substance that has afavorable light-emitting efficiency and can emit light of a desiredemission wavelength.

As a substance used for dispersing a light-emitting substance, forexample, an anthracene derivative such as9,10-di(2-naphthyl)-2-tert-butylanthracene (t-BuDNA); a carbazolederivative such as 4,4′-di(N-carbazolyl)biphenyl (CBP); a metal complexsuch as bis[2-(2-hydroxyphenyl)pyridinato]zinc (ZnpP₂) andbis[2-(2-hydroxyphenyl)benzoxazolato]zinc (ZnBOX); and the like can beused. However, the substance used for dispersing a light-emittingsubstance is not particularly limited to these materials. Note thatquenching of light emitted from the light-emitting substance due to theconcentration of the light-emitting substance can be prevented byemploying the structure.

In order to obtain red light emission, for example, the followingsubstances can be employed:4-dicyanomethylene-2-isopropyl-6-[2-(1,1,7,7-tetramethyljulolidine-9-yl)ethenyl]-4H-pyran(DCJTI);4-dicyanomethylene-2-methyl-6-[2-(1,1,7,7-tetramethyljulolidine-9-yl)ethenyl]-4H-pyran(DCJT);4-dicyanomethylene-2-tert-butyl-6-[2-(1,1,7,7-tetramethyljulolidine-9-yl)ethenyl]-4H-pyran(DCJTB); periflanthene;2,5-dicyano-1,4-bis[2-(10-methoxy-1,1,7,7-tetramethyljulolidine-9-yl)ethenyl]benzene;bis[2,3-bis(4-fluorophenyl)quinoxalmato]iridium (acetylacetonato)(Ir[Fdpq]₂(acac)) and the like. However, the present invention is notlimited to these materials, and a substance that can emit light with apeak of emission spectrum in 600 to 680 nm, can be used.

In order to obtain green light emission, substances such asN,N′-dimethylquinacridon (DMQd), coumarin 6, coumarin 545T, andtris(8-quinolinolate)aluminum (AIq₃) can be employed. However, thepresent invention is not limited to these materials, and a substancethat can emit light with a peak of emission spectrum in 500 to 550 nmcan be used.

In order to obtain blue light emission, the following substances can beemployed: 9,10-bis(2-naphthyl)-tert-butylanthracene (t-BuDNA);9,9′-bianthryl; 9,10-diphenylanthracene (DPA);9,10-bis(2-naphthyl)anthracene (DNA);bis(2-methyl-8-quinolinolate)-4-phenylphenolate-gallium (BGaq);bis(2-methyl-8-quinolinolate)-4-phenylphenolate-aluminum (BAIq); and thelike. However, the present invention is not limited to these materials,and a substance that can emit light with a peak of emission spectrum in420 to 500 nm can be used.

The third layer 113 is a layer generating electrons. As the third layer113, for example, a layer including a substance having electrontransporting property and a substance having electron donating propertywith respect to the substance having electron transporting property canbe given. The substance having electron transporting property is asubstance having a strong property of transporting electrons rather thanholes. For example, a metal complex such astris(8-quinolinolato)aluminum (AIq₃),tris(4-methyl-8-quinolinolato)aluminum (Almqa),bis(10-hydroxybenzo[h]-quinolinato)beryllium (BeBq₂),bis(2-methyl-8-quinolinolato)-4-phenylphenolate-aluminum (BAIq),bis[2-(2-hydroxyphenyl)benzoxazolate]zinc (Zn(BOX)₂),bis[2-(2-hydroxyphenyl)benzothiazolate]zinc (Zn(BTZ)₂) can be used. Inaddition, the following substances can be used as the substance havingelectron transporting property:2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD);1,3-bis[5-(p-tert-butyl phenyl)-1,3,4-oxadiazole-2-yl]benzene (OXD-7);3-(44ert-butylphenyl)-4˜phenyl-5-(4-biphenylyl)-1,2,4-triazole (TAZ);3-(4-tert-butylphenyl)-4-(4-ethylphenyl)-5-(4-biphenylyl)-1,2,4-triazole(p-EtTAZ); bathophenanthroline (BPhen); bathocuproin (BCP);4,4′-bis(5-methylbenzoxazolyl-2-yl)stilbene (BzOs) and the like.However, the substance having electron transporting property is notlimited to these materials.

Further, an alkali metal such as lithium and cesium, alkaline earthmetal such as magnesium and calcium, rare-earth metal such as erbium andytterbium, and the like can be used as the substance having electrondonating property with respect to the substance having electrontransporting property. However, the substance having electron donatingproperty with respect to the substance having electron transportingproperty is not limited thereto. Preferably, the third layer 113includes the substance having electron donating property with respect tothe substance having electron transporting property and the substancehaving electron transporting property so as to satisfy a molar ratio(i.e., the substance having electron donating property with respect tothe substance having electron transporting property/the substance havingelectron transporting property) of 0.5 to 2.

Additionally, the third layer 113 may include a substance such as zincoxide, zinc sulfide, zinc selenide, tin oxide and titanium oxide.

In the above-described light-emitting element, the difference inelectron affinity between the substance having electron transportingproperty, which is included in the third layer 113 and a substance,which is included in a layer in contact with the third layer 113 amongthe layers included in the second layer 112, is preferably set to be 2eV or less, more preferably, 1.5 eV or less. When the third layer 113 ismade using an n-type semiconductor, the difference between a workfunction of the n-type semiconductor and the electron affinity of thesubstance, which is included in the layer in contact with the thirdlayer 113 among the layers included in the second layer 112, ispreferably 2 eV or less, more preferably, 1.5 eV or less.

Further, the layer in contact with the third layer 113 among the layersincluded in the second layer 112 corresponds to the electron injectinglayer 124 in the case where the second layer 112 has a stackedstructure.

The second layer 112 may have a single layer structure of alight-emitting layer or a structure without the electron injecting layer124 or the like.

As just described, the second layer 112 and the second electrode 102 arejoined by the third layer 113, and thus, electrons can be easilyinjected from the second electrode 102 into the second layer 112.

Then, the electrodes are described. One of the first electrode 101 andthe second electrode 102 can transmit visible light and is formed usinga conductive substance. Therefore, light can be extracted outsidethrough one of the first electrode 101 and the second electrode 102described above.

As materials for forming the first electrode 101, in addition toaluminum (Al) or a light-transmitting material such as indium tin oxide(ITO), indium tin oxide containing silicon oxide (hereinafter, alsoreferred to as ITSO), or indium oxide containing zinc oxide of 2 to 20%,a metal material such as gold (Au), platinum (Pt), nickel (Ni), tungsten(W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu)or palladium (Pd), or a stacked structure of the metals can be used. Forexample, when the first electrode needs to have a light-transmittingproperty, the metal material is made thin to become semi-transparent anda transparent material is stacked thereover. Naturally, a single layerof a semi-transparent metal material may be used. However, the materialsof the first electrode are not limited to these materials.

As materials for forming the second electrode 102, in addition to alight-transmitting material such as indium tin oxide (ITO), indium tinoxide containing silicon oxide (ITSO), or indium oxide containing zincoxide of 2 to 20%, a metal material such as gold (Au), platinum (Pt),nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe),cobalt (Co), copper (Cu) or palladium (Pd), or a stacked structure ofthe metals can be used. For example, when the second electrode needs tohave a light-transmitting property, the metal material is made thin tobecome semi-transparent, and a transparent material is stackedthereover. Naturally, a single layer of a semi-transparent metalmaterial may be used. However, the materials of the second electrode arenot limited to these materials.

The first electrode 101 or the second electrode 102 can be formed by asputtering method, an evaporation method or the like.

As described above, the electron transporting layer 123 can be formedbetween the third layer 113 and the light-emitting layer 122. In thismanner, the distance from the light-emitting layer 122 to the secondelectrode 102 or the third layer 113 can be increased by providing theelectron transporting layer 123. Thus, quenching of light due to themetal can be prevented. The electron transporting layer 123 has afunction of transporting injected electrons to the light-emitting layer122.

The electron transporting layer 123 can be formed using theabove-described AIq₃, Almq₃, BeBq₂, BAlq, Zn(BOX)₂, Zn(BTZ)₂, PBD,OXD-7, TAZ, p-EtTAZ, BPhen, BCP, or the like. Without being limited tothese materials, the electron transporting layer 123 may be formed byusing an substance having electron transporting property in which theelectron mobility is higher than the hole mobility. Also, the electrontransporting layer 123 is preferably formed by using a substance havingthe electron mobility of 10⁻⁶ cm²/Vs or more. Further, the electrontransporting layer 123 may have a multilayer structure formed bystacking two or more layers made from the above-described substances.

As shown in FIG. 1, the electron injecting layer 124 may be providedbetween the second electrode 102 and the electron transporting layer123. The electron injecting layer 124 has a function of helping theinjection of holes into the electron transporting layer 123 from thesecond electrode 102. In addition, since the third layer 113 exists, theelectron injecting layer 124 is not necessarily provided. In otherwords, the third layer 113 can also have a function of helping electronsto be injected.

In this embodiment mode, the hole transporting layer 121 is providedbetween the first electrode 101 and the light-emitting layer 122 asshown in the embodiment mode described above. By providing the holetransporting layer 121, the distance from the light-emitting layer 122to the first electrode 101 or the first layer 111 can be increased, andthus, quenching of light generated in the light-emitting layer due tothe metal can be prevented. Note that the hole transporting layer 121 isa layer having a function of transporting holes injected from the firstelectrode 101 to the light-emitting layer 122.

The above-described α-NPD, TPD, TDATA, MTDATA, DNTPD and the like can beused for the hole transporting layer 121. However, the hole transportinglayer 121 is not particularly limited thereto. The hole transportinglayer 121 can be formed using the above-described substance with a holetransporting property of which the hole mobility is higher than theelectron mobility. Specifically, the hole transporting layer 121 ispreferably formed using a substance having the hole mobility of 10⁻⁶cm²/Vs or more. The hole transporting layer 121 may have a multilayerstructure formed by stacking two or more layers including theabove-described substances.

The hole transporting layer 121 can be formed using a metal oxide suchas molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide ormanganese oxide. In addition, the hole transporting layer 121 can beformed using the above-described phthalocyanine based compound such asH₂Pc, CuPC and VOPc, the aromatic amine compound such as DNTPD, or ahigh molecular weight material such as apoly(ethylenedioxythiophene)/poly(styrene sulfonate) mixture(PEDOT/PSS). Furthermore, the hole transporting layer 121 may be formedusing the above-described layer including the substance with the holetransporting property and the substance having the electron acceptingproperty with respect to the substance with the hole transportingproperty. However, the hole transporting layer 121 is not limited tothese. In addition, the hole transporting layer 121 can also be servedas the first layer 111.

Embodiment Mode 7

Embodiment Mode 7 specifically describes a cross-sectional structure ofa pixel included in a light-emitting element. In this embodiment mode, across-sectional structure of a pixel in the case where a transistor forcontrolling current supplied to a light-emitting element (drivingtransistor) is a p-channel thin film transistor (TFT) is described usingFIG. 3. Note that this embodiment mode describes a case where one of thefirst electrode 101 and the second electrode 102, whose potentials caneach controlled by a transistor, is an anode and the other is a cathode.

FIG. 3 is a cross-sectional view of a pixel having RGB, in the case of atop emission type in which TFTs 601R, 601G and 601B are each p-channeltype and light generated in a light-emitting element 603 is extractedthrough the second electrode 102. In FIG. 3, the first electrode 101 ofthe light-emitting element 603 is electrically connected to the TFTs601R, 601G and 601B.

The TFTs 601R, 601G and 601B are 10 to 200 nm thick, and channel formingregions are formed with island-like semiconductor films. Any of anamorphous semiconductor film, a crystalline semiconductor film, and amicrocrystalline semiconductor film may be used as the semiconductorfilm as in the above-described embodiment mode. For example, in the caseof forming an amorphous semiconductor film, the amorphous semiconductorfilm is formed first and is heated to be crystallized by a heattreatment to form a crystalline semiconductor film. The heat treatmentcan be conducted by a heating furnace, laser irradiation, lampannealing, or a combination thereof.

In the case of laser irradiation, a continuous wave (CW) laser or apulsed laser can be used.

Other crystallization conditions are the same as those in the abovedescribed embodiment mode.

Laser irradiation may be conducted so that the incident angle θ of laserlight with respect to a semiconductor film is 0°<θ<90°. Consequently, aninterference of laser light can be prevented.

The semiconductor film may be irradiated with continuous wave laserlight of a fundamental wave and continuous wave laser light of aharmonic, or may be irradiated with continuous wave laser light of afundamental wave and pulsed wave laser light of a harmonic. Energy canbe supplemented by irradiating with plural kinds of laser light.

In the case of the pulsed laser, a pulsed laser may be oscillated withsuch a repetition rate that the laser of the next pulse is emittedbefore solidifying the semiconductor film that has been melted. Thismakes it possible to obtain crystal grains which are sequentially grownin the scanning direction. In other words, it is possible to use apulsed beam with a lower limit of a repetition rate that is set shorterthan the time required for the melted semiconductor film to solidify.The pulsed beam that can be used actually is a repetition rate of 10 MHzor more. This repetition rate is extremely higher than that of thepulsed laser used usually, which is from several tens to several hundredHz, to conduct laser crystallization.

In the case of using a heating furnace for another heat treatment, anamorphous semiconductor film is heated at a temperature of 500 to 550°C. for 2 to 20 hours. At this time, the temperature may be set inmultiple stages in the range of 500 to 550° C. so as to gradually reacha higher temperature. This is because so-called dehydrogenation can beperformed to reduce film roughness during crystallization, sincehydrogen and the like of the amorphous semiconductor film are releasedin the first low temperature heating process. When a metal element forpromoting crystallization, for example, Ni, is further formed over theamorphous semiconductor film, the heat temperature can be lowered, whichis preferable. Even in the case of crystallization using such a metalelement, a heat treatment may be performed at a temperature of 600 to950° C.

However, in the case of forming a metal element, there is a concern thatthe metal element may adversely affect electric characteristics of asemiconductor element. Thus, a gettering process is required to reduceor remove the metal element. For example, a process of gettering themetal element may be performed using the amorphous semiconductor film asa gettering sink.

In the TFTs 601R, 601G and 601B, a gate insulating film covering thesemiconductor film, a gate electrode in which a fist conductive film anda second conductive film are stacked, an insulating film over the gateelectrode are provided.

The TFTs 601R, 601G and 601B are each p-channel type, and thesemiconductor film has a single drain structure having only a highconcentration impurity region. Alternatively, the TFTs 601R, 601G and601B may have an LDD (lightly doped drain) structure in which a lowconcentration impurity region and a high concentration impurity regionare provided in the semiconductor film.

The TFTs 601R, 601G and 601B are covered with an interlayer insulatingfilm 607, and a bank 608 having an opening portion is formed over theinterlayer insulating film 607. The first electrode 101 is partiallyexposed in the opening portion of the bank 608, and the first electrode101, electroluminescent layers 605R, 605G and 605B, and the secondelectrode 102 are sequentially stacked in the opening portion.

The electroluminescent layers 605R, 605G and 605B correspond to thefirst to third layers 111, 112 and 113, and the thickness of any of thefirst to third layers is made different depending on each emissioncolor. This embodiment mode shows a top emission type, and thus, thethickness of the first layers closest to the first electrode 101 may bedifferent depending on each emission color. As a result, decrease in thelight-extraction efficiency can be prevented. Preferably, increase indriving voltage due to a thicker thickness can be prevented by using alayer in which an organic compound and a metal oxide are mixed as thefirst layer. Note that the thickness of the third layer can also be madedifferent depending on each emission color.

Since the top emission type is shown in this embodiment mode, the firstelectrode 101 is formed using a non-light-transmitting material, inother words, highly reflective material. As the specific examples, metalmaterials such as aluminum (Al), gold (Au), platinum (Pt), nickel (Ni),tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co),copper (Cu) and palladium (Pd) can be given. Further, a stackedstructure of light-transmitting materials such as indium tin oxide(ITO), indium tin oxide containing silicon oxide (ITSO), and indiumoxide containing zinc oxide of 2 to 20% may be used. However, thematerial of the first electrode is not limited thereto.

The second electrode 102 is formed using a light-transmitting materialand preferably, a substance having a high work function. Specifically,indium tin oxide (ITO), indium tin oxide containing silicon oxide(ITSO), and indium oxide containing zinc oxide of 2 to 20% can be used.In addition, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chrome(Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium(Pd) or the like, each of which is not light-transmitting, can be usedby making them thin enough to transmit light. A stacked structure ofthese materials can also be used. However, the material of the secondelectrode is not limited thereto.

In addition, since the transistor for controlling supply is p-channeltype, a wiring connected to the TFTs 601R, 601G and 601B can be used asthe first electrode 101.

The first electrode 101 or the second electrode 102 can be formed by asputtering method, an evaporation method or the like.

The interlayer insulating film 607 is formed using an organic resinmaterial, or an inorganic insulating material, or a siloxane basedinsulator. Moreover, a material referred to as a low dielectric constantmaterial (low-k material) may be used for the interlayer insulating film607.

The bank 608 can be formed using an organic resin material, an inorganicinsulating material or a siloxane based insulator. For example, acrylic,polyimide, polyamide and the like can be used as the organic resinmaterial, and silicon oxide, silicon nitride oxide and the like can beused as the inorganic insulating material. In particular, aphotosensitive organic resin material is used for the bank 608, anopening portion is formed over the first electrode 101 so that the sideof the opening portion has an inclined plane with a continuouscurvature. As a result, a short circuit between the first electrode 101and the second electrode 102 can be prevented.

In such a pixel, light emitted from the light-emitting element 603 canbe extracted through the second electrode 102 as shown by the outlinearrow.

Next, FIG. 4 is a cross-sectional view of a pixel having each emissioncolor (RGB) in the case of a bottom emission type in which TFTs 601R,601G and 601B are each p-channel type and light generated in alight-emitting element 603 is extracted through the second electrode102.

In FIG. 4, the first electrode 101 of the light-emitting element 603 iselectrically connected to the TFTs 601R, 601G and 601B. In addition,electroluminescent layers 605R, 605G and 605B, and the second electrode102 are sequentially stacked on the first electrode 101.

The TFTs 601R, 601G and 601B can be formed in the same manner as in FIG.3. In addition, since the bottom emission type is shown in FIG. 4, thefirst electrode 101 has a light-transmitting property and the secondelectrode 102 has a non-light-transmitting property. Materials of theelectrodes can be referred to the description of the first electrode andthe second electrode in FIG. 3.

The electroluminescent layers 605R, 605G and 605B can be formed in thesame manner as the electroluminescent layers shown in FIG. 3, and thethickness of any of the first to third layers is different depending oneach of R, G and B. Since the bottom emission type is shown in FIG. 4,the thickness of the third layer closest to the second electrode 102 maybe made different depending on each emission color. Consequently,decrease in the light-extraction efficiency can be prevented.Preferably, a layer in which an organic compound and a metal oxide aremixed is used as the third layer, thereby preventing the increase of thedriving voltage due to the thicker thickness. Note that the thickness ofthe first layer can be made different depending on each emission color.

In the pixel shown in FIG. 4, light emitted from the light-emittingelement 613 can be extracted through the second electrode 102 as shownby the outline arrow.

This embodiment mode can be freely combined with the embodiment modesdescribed above.

Embodiment Mode 8

Embodiment Mode 8 specifically describes a cross-sectional structure ofa pixel in the case where a transistor for controlling current suppliedto a light-emitting element (driving transistor) is an n-channel thinfilm transistor (TFT). This embodiment mode describes the case where thefirst electrode is a cathode and the second electrode is an anode.

Next, FIG. 5 is a cross-sectional view of a pixel in the case of a topemission type in which TFTs 611R, 611G and 611B are each n-channel typeand light generated in a light-emitting element 613 is extracted throughthe second electrode 102. In FIG. 5, the first electrode 101 of thelight-emitting element 613 is electrically connected to the TFTs 611R,611G and 611B. In addition, electroluminescent layers 615R, 615G and615B, and the second electrode 102 are sequentially stacked on the firstelectrode 101.

The TFTs 611R, 611G and 611B can be formed in the same manner as TFTs601R, 601G and 601B in the embodiment mode described above.

Since the top emission type is shown in FIG. 5, the first electrode 101is formed using a non-light-transmitting material and the secondelectrode 102 is formed using a light-transmitting material. Thematerials of the electrodes can be referred to the embodiment modesdescribed above. In addition, since the transistor for controllingsupply of current is n-channel type, a wiring connected to the TFTs611R, 611G and 611B can be used as the first electrode 101.

The electroluminescent layers 615R, 615G and 615B can be formed in thesame manner as the electroluminescent layers 605R, 605G and 605B in theembodiment mode described above. The hole injecting layer, the holetransporting layer, the light-emitting layer, the electron transportinglayer and the electron injecting layer are stacked in this order on thefirst electrode 101, since the first electrode 101 is an anode, when theelectroluminescent layer 615 has, in addition to the light-emittinglayer, any of the following: the hole injecting layer, the holetransporting layer, the electron transporting layer and the electroninjecting layer.

The electroluminescent layers 615R, 615G and 615B correspond to thefirst to third layers 111, 112 and 113, and the thickness of any of thefirst to third layers is made different depending on each emissioncolor. Since the top emission type is shown in this embodiment mode, thethickness of the first layer closest to the first electrode 101 is madedifferent depending on each emission color. Consequently, decrease inthe light-extraction efficiency can be prevented. Preferably, a layer inwhich an organic compound and a metal oxide are mixed is used as thefirst layer, thereby preventing the increase of the driving voltage dueto the thicker thickness. Note that the thickness of the third layer canbe made different depending on each emission color.

In the pixel shown in FIG. 5, light emitted from the light-emittingelement 613 can be extracted through the second electrode 102 as shownby the outline arrow.

Next, FIG. 6 is a cross-sectional view of a pixel having each emissioncolor (RGB), in the case of a bottom emission type in which TFTs 611R,611G and 611B are each n-channel type and light generated in alight-emitting element 613 is extracted through the first electrode 101.

In FIG. 6, the first electrode 101 of the light-emitting element 613 iselectrically connected to the TFTs 611R, 611G and 611B. In addition,electroluminescent layers 615R, 615G and 615B, and the second electrode102 are sequentially stacked on the first electrode 101.

The TFTs 611R, 611G and 611B can be formed in the same manner as in theembodiment mode described above. In addition, since the bottom emissiontype is shown in FIG. 6, the first electrode 101 has alight-transmitting property and the second electrode 102 has anon-light-transmitting property. The materials thereof can be referredto the embodiment modes described above.

The electroluminescent layers 615R, 615G and 615B can also be formed inthe same manner as in the embodiment modes described above and thethickness of any of the first to third layers is made differentdepending on each of R, G and B. Note that the hole injecting layer, thehole transporting layer, the light-emitting layer, the electrontransporting layer and the electron injecting layer are stacked in thisorder on the first electrode 101, since the first electrode 101 is ananode, when the electroluminescent layer 615 has, in addition to thelight-emitting layer, any of the following: the hole injecting layer,the hole transporting layer, the electron transporting layer and theelectron injecting layer.

Since the bottom emission type is shown in FIG. 6, the thickness of thethird layer closest to the second electrode 102 is made differentdepending on each emission color. Consequently, decrease in thelight-extraction efficiency can be prevented. Preferably, a layer inwhich an organic compound and a metal oxide are mixed is used as thethird layer, thereby preventing the increase of the driving voltage dueto the thicker thickness. Note that the thickness of the first layer canbe made different depending on each emission color.

In the pixel shown in FIG. 6, light emitted from the light-emittingelement 613 can be extracted through the first electrode 101 as shown bythe outline arrow.

This embodiment mode can be freely combined with the embodiment modesdescribed above.

Embodiment Mode 9

Next, an equivalent circuit diagram of a pixel having a light-emittingelement is described with reference to FIGS. 7A to 7C.

FIG. 7A is an example of an equivalent circuit diagram of a pixel, whichincludes a signal line 6114, a power supply line 6115, a scanning line6116, a light-emitting element 6113, transistors 6110 and 6111, and acapacitor 6112 at the intersection portion formed by the signal line6114, the power supply line 6115 and the scanning line 6116. The signalline 6114 is inputted with a video signal by a signal line drivercircuit. The transistor 6110 can control supply of the video signal to agate of the transistor 6111 in accordance with a selection signalinputted to the scanning line 6116. The transistor 6111 is a drivingtransistor that can control supply of current to the light-emittingelement 6113 in accordance with the potential of the video signal. Thecapacitor 6112 can hold voltage between a gate and a source of thetransistor 6111. Note that the capacitor 6112 is provided in FIG. 7A;however, it is not required to be provided if the gate capacitance ofthe transistor 6111 or the other parasitic capacitance can substitutefor it.

FIG. 7B is an equivalent circuit diagram of a pixel where a transistor6118 and a scanning line 6119 are additionally provided in the pixelshown in FIG. 7A. By the transistor 6118, potentials of the gate and asource of the transistor 6111 can be equal to each other so as toforcibly flow no current into the light-emitting element 6113.Therefore, the length for a subframe period can be set to be shorterthan a period for inputting a video signal into all pixels. In addition,a state in which no current forcibly flows to the light-emitting element613 can be obtained depending on a driving method, even in the pixel asshown in FIG. 7A.

FIG. 7C is an equivalent circuit diagram of a pixel where a transistor6125 and a wiring 6126 are additionally provided in the pixel shown inFIG. 7B. Gate potential of the transistor 6125 is fixed by the wiring6126. In addition, the transistors 6111 and 6125 are connected in seriesbetween the power supply line 6115 and the light-emitting element 6113.In FIG. 7C, accordingly, the transistor 6125 controls the amount ofcurrent supplied to the light-emitting element 6113 while the transistor6111 controls whether the current is supplied or not to thelight-emitting element 6113.

It is to be noted that a configuration of a pixel circuit of the presentinvention is not limited to those described in this embodiment mode.This embodiment mode can be freely combined with the embodiment modesdescribed above.

Embodiment Mode 10

An electronic device provided with a light-emitting device according thepresent invention includes: a television set (simply referred to as aTV, or a television receiver), cameras such as a digital camera and adigital video camera, a mobile phone set (simply referred to as acellular phone set, or a cellular phone), a portable informationterminal such as PDA (personal digital assistant), a portable gamemachine, a monitor for a computer, a computer, a sound reproducingdevice such as a car audio set, an image reproducing device providedwith a recording medium such as a home game machine, and the like.Specific examples thereof are described with reference to FIGS. 8A to8F.

A portable information terminal shown in FIG. 8A includes a main body9201, a display portion 9202 and the like. The light-emitting device ofthe present invention can be applied to the display portion 9202. As aresult, the portable information terminal in which the light-extractionefficiency can be maximum, and that can achieve lower power consumptioncan be provided.

A digital video camera shown in FIG. 8B includes a display portion 9701,a display portion 9702 and the like. The light-emitting device of thepresent invention can be applied to the display portions 9701 and 9702.As a result, the digital video camera in which the light-extractionefficiency can be maximum, and that can achieve lower power consumptioncan be provided.

A cellular phone shown in FIG. 8C includes a main body 9101, a displayportion 9102 and the like. The light-emitting device of the presentinvention can be applied to the display portion 9102. As a result, thecellular phone in which the light-extraction efficiency can be maximum,and that can achieve lower power consumption can be provided.

A portable television set shown in FIG. 8D includes a main body 9301, adisplay portion 9302 and the like. The light-emitting device of thepresent invention can be applied to the display portion 9302. As aresult, the portable television set in which the light-extractionefficiency can be maximum, and that can achieve lower power consumptioncan be provided. The light-emitting device of the present invention canbe applied to various types of television sets such as a small-sizedtelevision incorporated in a portable terminal such as a cellular phone,a medium-sized television which is portable, and a large-sizedtelevision (for example, 40 inches or more).

A portable computer shown in FIG. 8E includes a main body 9401, adisplay portion 9402 and the like. The light-emitting device of thepresent invention can be applied to the display portion 9402. As aresult, the portable computer in which the light-extraction efficiencycan be maximum, and that can achieve lower power consumption can beprovided.

A television set shown in FIG. 8F includes a main body 9501, a displayportion 9502 and the like. The light-emitting device of the presentinvention can be applied to the display portion 9502. As a result, thetelevision set in which the light-extraction efficiency can be maximum,and that can achieve lower power consumption can be provided.

As described above, by using a light-emitting device according to thepresent invention, electronic devices in which the light-extractionefficiency can be maximum and lower power consumption is achieved can beprovided.

EXAMPLES Example 1

Example 1 shows results of emission intensity of elements emitting eachemission color, which were obtained by a multiple interference numericalcalculation.

First, FIG. 14 shows measured results of a photoluminescence spectrumobtained by depositing the second layer which is common in each emissioncolor, in other words, a light-emitting layer, over a glass substrate,exciting it with ultraviolet rays, and measuring the emission spectrum.In FIG. 14, each emission intensity is normalized.

Then, FIG. 13 shows results of the emission intensity obtained by amultiple interference numerical calculation. The structure of theelement emitting red colored light in FIG. 13 wasAl\ITSOVx-NPDrmolybdenumoxide:rubrene\α-NPD\Alq3(Ir[Fdpq]₂acac)\Alq₃\Bz0S:Li\ITSO that are 100nm\10 nm\20 nm\10 nm\40 nm\20 nm\20 nm\20 nm\110 nm thick, respectively.Note that [:] means that plural materials were co-evaporated withresistance heating evaporation to be mixed in a layer, and [\] meansthat each layer was stacked. The layers were stacked in this order fromthe left. The same is true in the following.

In this element structure, Al and ITSO corresponded to the firstelectrode 101; α-NPD: molybdenum oxide: rubrene and α-NPD, the firstlayer 111; AIq₃(Ir [Fdpq]₂acac), the second layer 112; AIq₃ and BzOSrLi,the third layer 113; and ITSO, the second electrode 102. In this elementstructure, Al and ITSO were formed by a sputtering method, and the otherlayers were formed by an evaporation method.

The structure of the element emitting green colored light wasAl\ITSO\α-NPD:molybdenumoxide:rubrene\α-NPD\Alq₃(DMQd)\Alq₃\BzOS:Li\ITSO that are 100 nm\10nm\120 nm\10 nm\40 nm\20 nm\20 nm\110 nm thick, respectively. In thiselement structure, Al and ITSO were formed by a sputtering method, andthe other layers were formed by an evaporation method.

In this element structure, Al and ITSO corresponded to the firstelectrode 101; α-NPD: molybdenum oxide: rubrene and α-NPD, the firstlayer 111; AIq₃(DMQd), the second layer 112; Alq3 and BzOS:Li, the thirdlayer 113; and ITSO, the second electrode 102.

The structure of the element emitting blue colored light wasAl\ITSO\α-NPD:molybdenum oxide:rubrene\α-NPD\tBuDNA\Alq₃\BzOS:Li\ITSOthat are 100 nm\10 nm\220 nm\10 nm\40 nm\20 nm\20 nm\110 nm thick,respectively. In this element structure, Al and ITSO were formed by asputtering method, and the other layers were formed by an evaporationmethod.

In this element structure, Al and ITSO corresponded to the firstelectrode 101; α-NPD: molybdenum oxide: rubrene and α-NPD, the firstlayer 111; tBuDNA, the second layer 112; AIq₃ and BzOS:Li, the thirdlayer 113; and ITSO, the second electrode 102.

These element structures were top emission type, and the thickness ofα-NPD: molybdenum oxide: rubrene closest to the first electrode 101 wasdifferent in each of the elements emitting each emission color.

Emission intensity of the elements emitting each emission color in FIG.13 is higher than that in FIG. 14. In other words, the emissionintensity was enhanced by making the thickness of the α-NPD: molybdenumoxide: rubrene different. Consequently, light from the element emittingeach emission color were extracted efficiently.

Example 2

One feature of the present invention is that the thickness of the α-NPD:molybdenum oxide: rubrene is large in Example 1. Thus, the relationshipbetween the thickness and driving voltage of the light-emitting elementis explained in Example 2.

FIG. 9 shows a graph of current density (mA/cm²) to voltage (V)characteristics in the case where the thickness X of α-NPB is 60 nmthick (sample 1), 80 nm thick (sample 2), 100 nm thick (sample 3), 120nm thick (sample 4), 140 nm thick (sample 5) and 160 nm thick (sample 6)in an element structure of ITO\CuPc (20 nm)\α-NPB (X nm)\Alq₃:DMQd (37.5nm)\Alq₃(37.5 nm)\calcium fluoride (CaF₂)(1 nm)\Al (200 nm). Table 1shows results of the current density (mA/cm²) to voltage (V)characteristics.

TABLE 1 Sample Thickness: X(nm) Voltage (V)*¹ (1) 60 12.5 (2) 80 13.5(3) 100 15.3 (4) 120 16.5 (5) 140 18.9 (6) 160 19.9

As shown in FIG. 9, as the thickness of α-NPB is increased, the voltageis also increased. Accordingly, the driving voltage needed for obtaininga desired current density is also increased as the thickness of α-NPB isincreased.

FIG. 10 shows a graph of current density (mA/cm²) to voltage (V)characteristics in the case where the thickness X of molybdenum oxidewas 20 ran thick (sample 7), 50 nm thick (sample 8), and 100 nm thick(sample 9), in an element structure of ITO\molybdenum oxide (X nm)\CuPc(20 nm)\α-NPB (40 nm)\Alq₃:DMQd (37.5 nm)\Alq₃(37.5 nm)\calcium fluoride(CaF₂) (\1 nm)\Al (200 nm). Table 2 shows results of the current density(mA/cm²) to voltage (V) characteristics.

TABLE 2 Sample Thickness: X(nm) Voltage (V)*¹ (7) 20 11.7 (8) 50 11.9(9) 100 12.7

As shown in FIG. 10, as the thickness of molybdenum oxide is increased,the voltage is also increased. Accordingly, the driving voltage neededfor obtaining a desired current density is also increased as thethickness of molybdenum oxide is increased.

It was recognized that the driving voltage was also increased when thethickness of the light-emitting element was increased.

However, the present inventors have found that the driving voltage isnot increased even when the thickness is increased, as a result offorming a layer including an organic compound and a metal oxide that isan inorganic compound. DNTPD was used as the organic compound andmolybdenum oxide was used as the metal oxide, and they wereco-evaporated with resistance heating co-evaporation to form a layer inwhich DNTPD and molybdenum oxide were mixed. FIG. 11 shows a graph ofcurrent density (mA/cm²) to voltage (V) characteristics of the layer inwhich DNTPD and molybdenum oxide are mixed. Note that the specificelement structure was ITSO\DNTPD:molybdenum oxiderrubrene (X nm)\α-NPB(10 nm)\A\Mq₃: Coumarin 6 (37.5 nm)\Alq3 (37.5 nm)\LiF (1 nm)\Al (200nm), and the thickness of DNTPD imolybdenum oxide:rubrene, namely X was40 nm thick (sample 10), 80 nm thick (sample 11), 120 nm thick (sample12), and 160 nm thick (sample 13). Note that it was possible that thereliability was increased by co-evaporating rubrene. Table 3 showsresults of the current density (mA/cm²) to voltage (V) characteristics.

TABLE 3 Sample Thickness: X(nm) Voltage (V)*¹ (10) 40 6.1 (11) 80 6.3(12) 120 6.3 (13) 160 6.3

As shown in FIG. 11, it is understood that the voltage is not increasedand kept almost constant even when the thickness (X nm) ofDNTPD:molybdenum oxide:rubrene is increased. In the element used forFIG. 11, the voltage itself is decreased.

The element structures used in FIGS. 9 and 11 are different from thoseused in Example 1, since the element structures in FIGS. 9 and 11 areused to find the relationship between the thickness of the layerincluding the organic compound and the metal oxide, and the drivingvoltage. However, even in the element in the example described above, itis not necessary for the driving voltage to become high, even when thethickness of DNTPDrmolybdenum oxiderrubrene is increased. Lower powerconsumption can be achieved in such a light-emitting device using alight-emitting element in which driving voltage is not needed to behigh, even when the thickness is increased.

In addition, by increasing the thickness of DNTPD rmolybdenumoxiderrubrene, a short circuit between the first electrode and thesecond electrode can be prevented. Consequently, productivity of thelight-emitting device including the element structure according to thepresent invention can be increased.

Example 3

In example 3, characteristics of molybdenum oxide that is a metal oxide,α-NPD that is an organic compound having high hole transportingproperty, and molybdenum oxide:α-NPD were examined. The films of themwere each formed by an evaporation method and molybdenum oxide:α-NPD wasco-evaporated by resistance heating evaporation.

As shown in Table 4, molybdenum oxide:α-NPD, which was a mixture ofmolybdenum oxide and α-NPD, had a smaller ionization potential thanmolybdenum oxide and α-NPD by about 0.1 to 0.2 eV. In other words, itwas understood that the hole injecting property is enhanced.

TABLE 4 Material of Layer IP^(b) (eV) MoOx −5.48 a-NPB −5.38MoO_(x):a-NPB (1:1)^(a) −5.37 MoO_(x):a-NPB (1:0.5)^(a) −5.27^(a)mol/mol ^(b)Ionization Potential (surveyed value by B39AC-2)

FIG. 12 shows absorption spectrum of the films. Absorption by molybdenumoxide:α-NPD (referred to as OMO_(x)) is more reduced than molubdenumoxide alone. Thus, it can be understood that light-absorption loss canbe reduced by forming a light-emitting element using molybdenumoxide:α-NPD rather than molybdenum oxide alone.

As shown in FIG. 12, molybdenum oxide: α-NPD has a new absorption peakaround 500 nm, while molybdenum oxide and α-NPD do not have acharacteristic peak in a visible light region. It can be thought thatthis is because a charge transfer complex was formed between molybdenumoxide and α-NPD. The molybdenum oxide served as an acceptor and α-NPDserved as a donor. The conductivity was increased and the effect ofpreventing increase of the driving voltage as described in Example 2 wasobtained because the charge transfer complex was formed. Moreover, it isconfirmed that an amine based compound such as DNTPD as well as α-NPDcan serve as a donor. Carbazole derivatives such as CBP or an aromatichydrocarbon compound such as t-BuDNA can be applied.

From these experimental results, it was recognized that a synergisticeffect was able to be obtained by mixing an organic compound and aspecific inorganic compound. The effect was not obtained by a singlebody thereof. Further, it was recognized that molybdenum oxide that is ametal oxide was preferably used as the inorganic compound.

1. A light-emitting device having at least first and secondlight-emitting elements exhibiting different emission colors, each ofthe first and second light-emitting elements comprising: a firstelectrode that has a non-light-transmitting property; a first layerserving as a layer generating holes over and in contact with the firstelectrode; a second layer serving as a layer including a light-emittinglayer over the first layer; a third layer serving as a layer generatingelectrons over the second layer; and a second electrode that has a lighttransmitting property over the third layer, wherein a thickness of thefirst layer of the first light-emitting element is different from thatof the second light-emitting element.
 2. A light-emitting device havingat least first and second light-emitting elements exhibiting differentemission colors, each of the first and second light-emitting elementscomprising: a first electrode that has a non-light-transmittingproperty; a first layer serving as a layer generating holes over and incontact with the first electrode; a second layer serving as a layerincluding a light-emitting layer over the first layer; a third layerserving as a layer generating electrons over the second layer; and asecond electrode that has a light transmitting property over the thirdlayer, wherein the first layer is a layer in which an organic compoundand a metal oxide are mixed, and wherein a thickness of the first layerof the first light-emitting element is different from that of the secondlight-emitting element.
 3. The light-emitting device according to anyone of claims 1 and 2, wherein the thickness of the first layer of thefirst light-emitting element is different from that of the secondlight-emitting element so that light-extraction efficiency of lightemitted from the light-emitting layer and reflected light, which hasbeen emitted from the light-emitting layer and is reflected on the firstelectrode, can be increased.
 4. The light-emitting device according toclaim 2, wherein the metal oxide is selected from the group consistingof molybdenum oxide, vanadium oxide and rhenium oxide.
 5. Thelight-emitting device according to claim 2, wherein the organic compoundis selected from the group consisting of4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl;4,4′-bis[N-(3-methylphenyl)-N-phenylamino]biphenyl;4,4′,4″-tris(N,N-diphenylamino)triphenylamine;4,4′,4″-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine;4,4′-bis{N-[4-(N,N-di-m-tolylamino)phenyl]-N-phenylamino}biphenyl;phthalocyanine; copper phthalocyanine; and vanadyl phthalocyanine.
 6. Alight-emitting device having at least first and second light-emittingelements exhibiting different emission colors, each of the first andsecond light-emitting elements comprising: a first electrode that has anon-light-transmitting property; a first layer serving as a layergenerating holes over and in contact with the first electrode; a secondlayer serving as a layer including a light-emitting layer over the firstlayer; a third layer serving as a layer generating electrons over thesecond layer; a fourth layer serving as a layer generating holes overthe third layer; and a second electrode that has a light transmittingproperty over the fourth layer, wherein a thickness of the first layerof the first light-emitting element is different from that of the secondlight-emitting element.
 7. A light-emitting device having at least firstand second light-emitting elements exhibiting different emission colors,each of the first and second light-emitting elements comprising: a firstelectrode that has anon-light-transmitting property; a first layerserving as a layer generating holes over and in contact with the firstelectrode; a second layer serving as a layer including a light-emittinglayer over the first layer; a third layer serving as a layer generatingelectrons over the second layer; a fourth layer serving as a layergenerating holes over the third layer; and a second electrode that has alight transmitting property over the fourth layer, wherein a thicknessof the first layer is different depending on each of the emission colorsso that light-extraction efficiency of light emitted from thelight-emitting layer and reflected light, which has been emitted fromthe light-emitting layer and is reflected on the first electrode, can beincreased.
 8. The light-emitting device according to any one of claims1, 2, 6 and 7, wherein the second electrode comprises indium tin oxideincluding silicon oxide.
 9. A light-emitting device comprising: aplurality of transistors provided at interconnection portions formed bysignal lines and scanning lines; a plurality of first electrodes thatare connected to the plurality of transistors and each has anon-light-transmitting property; a plurality of first layers serving aslayers generating holes over and in contact with the plurality of firstelectrodes, respectively; a plurality of second layers serving as layersincluding any of light-emitting layers emitting first to third lightover the plurality of first layers; a plurality of third layers servingas layers generating electrons over the plurality of second layers; anda second electrode that has a light transmitting property over theplurality of third layers, wherein thicknesses of the plurality of firstlayers are different depending on each light-emitting element emittingthe first to third light.
 10. A light-emitting device comprising: aplurality of transistors provided at interconnection portions formed bysignal lines and scanning lines; a plurality of first electrodes thatare connected to the plurality of transistors and each has anon-light-transmitting property; a plurality of first layers serving aslayers generating holes over and in contact with the plurality of firstelectrodes, respectively; a plurality of second layers serving as layersincluding at least one of light-emitting layers emitting first to thirdlight over the plurality of first layers; a plurality of third layersserving as layers generating electrons over the plurality of secondlayers; and a second electrode that has a light transmitting propertyover the plurality of first layers, the plurality of second layers andthe plurality of third layers, wherein the plurality of first layers areeach a layer in which an organic compound and a metal oxide are mixed,and wherein thicknesses of the plurality of first layers are differentdepending on each light-emitting element emitting the first to thirdlight.
 11. The light-emitting device according to claim 10, wherein themetal oxide is selected from the group consisting of molybdenum oxide,vanadium oxide and rhenium oxide.
 12. A light-emitting devicecomprising: a plurality of transistors provided at interconnectionportions formed by signal lines and scanning lines; a plurality of firstelectrodes that are connected to the plurality of transistors and eachhas a non-light-transmitting property; a plurality of first layersserving as layers generating holes over and in contact with theplurality of first electrodes, respectively; a plurality of secondlayers serving as layers including at least one of light-emitting layersemitting first to third light over the plurality of first layers; aplurality of third layers serving as layers generating electrons overthe plurality of second layers; a plurality of fourth layers serving aslayers generating holes over the plurality of third layers; and a secondelectrode that has a light transmitting property over the plurality offourth layers, wherein thicknesses of the plurality of first layers aredifferent depending on each light-emitting element emitting the first tothird light.
 13. The light-emitting device according to claim 12,wherein thicknesses of the plurality of first layers are differentdepending on each light-emitting element emitting the first to thirdlight so that light-extraction efficiency of light emitted from thelight-emitting layer and reflected light, which has been emitted fromthe light-emitting layer and is reflected on the first electrode, can beincreased.
 14. The light-emitting device according to claim 10, whereinthe organic compound is selected from the group consisting of4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl;4,4′-bis[N-(3-methylphenyl)-N-phenylamino]biphenyl;4,4′,4″-tris(N,N-diphenylamino)triphenylamine;4,4′,4″-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine;4,4′-bis{N-[4-(N,N-di-m-tolylamino)phenyl]-N-phenylamino}biphenyl;phthalocyanine; copper phthalocyanine; and vanadyl phthalocyanine. 15.The light-emitting device according to any one of claims 9, 10 and 12,wherein the second electrode comprises indium tin oxide includingsilicon oxide.
 16. A light-emitting device comprising: a plurality oftypes of color filters having different optical characteristics; a firstelectrode that has a non-light-transmitting property; a first layer overand in contact with the first electrode; a second layer serving as alayer including a light-emitting layer over the first layer; a thirdlayer over the second layer; and a second electrode that has a lighttransmitting property over the third layer, wherein any of the first tothird layers has an organic material and a metal oxide, and wherein athickness of the first layer is different depending on each of theoptical characteristics.
 17. A light-emitting device comprising: aplurality of types of color filters having different opticalcharacteristics; a first electrode that has a non-light-transmittingproperty; a first layer serving as a layer generating holes over and incontact with the first electrode; a second layer serving as a layerincluding a light-emitting layer over the first layer; a third layerserving as a layer generating electrons over the second layer; and asecond electrode that has a light transmitting property over the thirdlayer; wherein the first layer has an organic material and a metaloxide, and wherein a thickness of the first layer is different dependingon each of the optical characteristics.
 18. A light-emitting devicecomprising: a semiconductor film; a first electrode that has anon-light-transmitting property formed over the semiconductor film; afirst layer serving as a layer generating holes over and in contact withthe first electrode; a second layer serving as a. layer including alight-emitting layer over the first layer; a third layer serving as alayer generating electrons over the second layer; and a second electrodethat has a light transmitting property over the third layer; and aplurality of types of color filters having different opticalcharacteristics, which are each formed on the second electrode side,wherein the first layer has an organic material and a metal oxide, andwherein a thickness of the first layer is different depending on each ofthe optical characteristics.
 19. The light-emitting device according toany one of claims 16, 17 and 18, wherein the plurality of types of colorfilters are formed on an emission side.
 20. The light-emitting deviceaccording to any one of claims 16, 17 and 18, wherein the metal oxide isselected from the group consisting of molybdenum oxide, vanadium oxideand rhenium oxide.
 21. The light-emitting device according to any one ofclaims 16, 17 and 18, wherein the second electrode comprises indium tinoxide including silicon oxide.
 22. The light-emitting device accordingto any one of claims 1, 2, 6, 7, 16, 17, and 18, wherein an opticaldistance between the light-emitting layer and the first electrode is(2m−1)/4 -fold (m is a given positive integer) of an emissionwavelength.
 23. The light-emitting device according to any one of claims9, 10, and 12, wherein an optical distance between one of light-emittinglayers emitting first to third light and one of the plurality of firstelectrodes is (2m−1)/4 -fold (m is a given positive integer) of anemission wavelength.
 24. The light-emitting device according to any oneof claims 1, 2, and 6, wherein a thickness of the third layer of thefirst light-emitting element is different from that of the secondlight-emitting element.
 25. The light-emitting device according to claim7, wherein a thickness of the third layer is different depending on eachof the emission colors so that light-extraction efficiency of lightemitted from the light-emitting layer and reflected light, which hasbeen emitted from the light-emitting layer and is reflected on the firstelectrode, can be increased.
 26. The light-emitting device according toany one of claims 9, 10, and 12, wherein a thickness of the plurality ofthird layers are different depending on each light-emitting elementemitting the first to third light.
 27. The light-emitting deviceaccording to any one of claims 16, 17, and 18, wherein a thickness ofthe third layer is different depending on each of the opticalcharacteristics.